- 您现在的位置：买卖IC网 > Sheet目录452 > IXFH160N15T2 (IXYS)MOSFET N-CH 150V 160A TO-247
IXFH160N15T2
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
C iss
V DS = 10V, I D = 60A, Note 1
80
130
15
S
nF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
1120
pF
1
2
3
?P
C rss
113
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 ? (External)
37
15
50
26
ns
ns
ns
ns
Terminals: 1 - Gate
e
2 - Drain
Q g(on)
253
nC
3 - Source
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
67
73
0.21
nC
nC
0.17 ° C/W
° C/W
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
Source-Drain Diode
E 15.75 16.26
e 5.20 5.72
.610 .640
0.205 0.225
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
I S V GS = 0V
I SM Repetitive, Pulse Width Limited by T JM
V SD
I F = 100A, V GS = 0V, Note 1
Characteristic Values
Min. Typ. Max.
160
640
1.4
A
A
V
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
t rr
I RM
Q RM
I F = 80A, -di/dt = 100A/ μ s
V R = 75V, V GS = 0V
7.00
0.32
160
ns
A
μC
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFH160N15T
MOSFET N-CH 150V 160A TO-247
IXFH16N90Q
MOSFET N-CH 900V 16A TO-247
IXFH20N100P
MOSFET N-CH 1000V 20A TO-247
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
IXFH22N55
MOSFET N-CH 550V 22A TO-247AD
IXFH22N60P
MOSFET N-CH 600V 22A TO-247
IXFH230N075T2
MOSFET N-CH 75V 230A TO-247
IXFH230N10T
MOSFET N-CH 100V 230A TO-247
相关代理商/技术参数
IXFH16N120P
功能描述:MOSFET 16 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N50P
功能描述:MOSFET 500V 16A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N50P3
功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N80P
功能描述:MOSFET 16 Amps 800V 0.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N90
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFH16N90Q
功能描述:MOSFET 16 Amps 900V 0.65 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH170N10P
功能描述:MOSFET 170 Amps 100V 0.009 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH17N60
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs